| PART |
Description |
Maker |
| MH64S64APFH-7L MH64S64APFH-6L |
4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM 4294967296位（67108864 -文字4位）SynchronousDRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M465165DJ-6S M5M465405DJ-6S M5M465805DJ-6S M5M46 |
EDO MODE 67108864-BIT DYNAMIC RAM
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH64D72KLG-75 MH64D72KLG-10 |
4 /831 /838 /208-BIT (67 /108 /864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module 4831838208位（67108864 - Word72位），双数据速率同步DRAM模块
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MC6822 MC6808 MC6829 MC6802 MC6800P MC68B00 MC68A0 |
8-BIT MICROPROCESSING UNIT (MPU) 8-BIT, 1 MHz, MICROPROCESSOR, CDIP40
8-BIT MPUS, 8-BIT MCUS, 8-BIT PERIPHERALS
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
SPANSION
|
| W25X80 W25X40 W25X40LSSCG W25X40LSSCZ W25X40LSSI W |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
WINBOND[Winbond]
|
| W25X20AVDAIZ W25X40AVDAIZ W25X80AVDAIZ W25X40AVSNI |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| TC9WMB2FK TC9WMB1FK |
1024-Bit (128 x 8 Bit) / 2048-Bit (256 x 8 Bit) 2-Wire Serial E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| AD7470 HSC-INTERFACEBOARD EVAL-CONTROLBOARD AD7472 |
AD7470/AD7472: 1.75MSPS. 4mW 10-Bit/12-Bit SAR ADC Data Sheet (Rev. A. 3/00)
2.7 V to 5.25 V, Micropower, 8-Channel, 125 kSPS, 12-Bit ADC in 16-Lead TSSOP
12-Bit, 2.7 V to 5.25 V, 1.5 MSPS Low Power ADC
10-Bit, 2.7 V to 5.25 V, 1.75 MSPS Low Power ADC
1.75 MSPS, 4 mW 10-Bit/12-Bit Parallel ADCs
1.75MSPS, 4mW 10-Bit/12-Bit SAR ADC
|
Analog Devices, Inc.
AD[Analog Devices]
|
